Surface roughness induced electron mobility degradation in InAs nanowires
Identifieur interne : 000096 ( Chine/Analysis ); précédent : 000095; suivant : 000097Surface roughness induced electron mobility degradation in InAs nanowires
Auteurs : RBID : Pascal:13-0344156Descripteurs français
- Pascal (Inist)
- Rugosité, Mobilité électron, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Nanofil, Nanomatériau, Synthèse nanomatériau, Nickel, Catalyseur, Dépôt chimique phase vapeur, Cristallinité, Morphologie surface, Revêtement, Nanoélectronique, Propriété électronique, Propriété électrique, Loi échelle, Mesure température, Effet surface, Interface, Diffusion phonon, Diffusion surface, Etat surface, 8107V, 8107B, 8116, 8116H.
- Wicri :
- concept : Nickel.
English descriptors
- KwdEn :
- CVD, Catalysts, Coatings, Crystallinity, Electrical properties, Electron mobility, Electronic properties, III-V compound, III-V semiconductors, Indium arsenides, Interfaces, Nanoelectronics, Nanomaterial synthesis, Nanostructured materials, Nanowires, Nickel, Phonon scattering, Roughness, Scaling laws, Surface effect, Surface morphology, Surface scattering, Surface states, Temperature measurement.
Abstract
In this work, we present a study of the surface roughness dependent electron mobility in InAs nanowires grown by the nickel-catalyzed chemical vapor deposition method. These nanowires have good crystallinity, well-controlled surface morphology without any surface coating or tapering and an excellent peak field-effect mobility up to 15 000 cm2 V-1 s-1 when configured into back-gated field-effect nanowire transistors. Detailed electrical characterizations reveal that the electron mobility degrades monotonically with increasing surface roughness and diameter scaling, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the dominant impact of surface roughness scattering on the electron mobility for miniaturized and surface disordered nanowires. All these factors suggest that careful consideration of nanowire geometries and surface condition is required for designing devices with optimal performance.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Surface roughness induced electron mobility degradation in InAs nanowires</title><author><name>FENGYUN WANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon Tong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road</s1><s2>Qingdao</s2><s3>CHN</s3><sZ>1 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Qingdao</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Shenzhen Research Institute, City University of Hong Kong</s1><s2>Shenzhen</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shenzhen</wicri:noRegion></affiliation></author><author><name>SENPO YIP</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon Tong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Shenzhen Research Institute, City University of Hong Kong</s1><s2>Shenzhen</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shenzhen</wicri:noRegion></affiliation></author><author><name>NING HAN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon Tong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Shenzhen Research Institute, City University of Hong Kong</s1><s2>Shenzhen</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shenzhen</wicri:noRegion></affiliation></author><author><name>KITWA FOK</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon Tong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon</wicri:noRegion></affiliation></author><author><name>HAO LIN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon Tong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Shenzhen Research Institute, City University of Hong Kong</s1><s2>Shenzhen</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shenzhen</wicri:noRegion></affiliation></author><author><name sortKey="Hou, Jared J" uniqKey="Hou J">Jared J. Hou</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon Tong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Shenzhen Research Institute, City University of Hong Kong</s1><s2>Shenzhen</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shenzhen</wicri:noRegion></affiliation></author><author><name>GUOFA DONG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon Tong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon</wicri:noRegion></affiliation></author><author><name>TAKFU HUNG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon Tong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon</wicri:noRegion></affiliation></author><author><name sortKey="Chan, K S" uniqKey="Chan K">K. S. Chan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon Tong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Shenzhen Research Institute, City University of Hong Kong</s1><s2>Shenzhen</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shenzhen</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon Tong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon</wicri:noRegion></affiliation></author><author><name sortKey="Ho, Johnny C" uniqKey="Ho J">Johnny C. Ho</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon Tong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Shenzhen Research Institute, City University of Hong Kong</s1><s2>Shenzhen</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shenzhen</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon Tong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0344156</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0344156 INIST</idno><idno type="RBID">Pascal:13-0344156</idno><idno type="wicri:Area/Main/Corpus">000573</idno><idno type="wicri:Area/Main/Repository">000431</idno><idno type="wicri:Area/Chine/Extraction">000096</idno></publicationStmt><seriesStmt><idno type="ISSN">0957-4484</idno><title level="j" type="abbreviated">Nanotechnology : (Bristol, Print)</title><title level="j" type="main">Nanotechnology : (Bristol. Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>CVD</term><term>Catalysts</term><term>Coatings</term><term>Crystallinity</term><term>Electrical properties</term><term>Electron mobility</term><term>Electronic properties</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Interfaces</term><term>Nanoelectronics</term><term>Nanomaterial synthesis</term><term>Nanostructured materials</term><term>Nanowires</term><term>Nickel</term><term>Phonon scattering</term><term>Roughness</term><term>Scaling laws</term><term>Surface effect</term><term>Surface morphology</term><term>Surface scattering</term><term>Surface states</term><term>Temperature measurement</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Rugosité</term><term>Mobilité électron</term><term>Arséniure d'indium</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Nanofil</term><term>Nanomatériau</term><term>Synthèse nanomatériau</term><term>Nickel</term><term>Catalyseur</term><term>Dépôt chimique phase vapeur</term><term>Cristallinité</term><term>Morphologie surface</term><term>Revêtement</term><term>Nanoélectronique</term><term>Propriété électronique</term><term>Propriété électrique</term><term>Loi échelle</term><term>Mesure température</term><term>Effet surface</term><term>Interface</term><term>Diffusion phonon</term><term>Diffusion surface</term><term>Etat surface</term><term>8107V</term><term>8107B</term><term>8116</term><term>8116H</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Nickel</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this work, we present a study of the surface roughness dependent electron mobility in InAs nanowires grown by the nickel-catalyzed chemical vapor deposition method. These nanowires have good crystallinity, well-controlled surface morphology without any surface coating or tapering and an excellent peak field-effect mobility up to 15 000 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> when configured into back-gated field-effect nanowire transistors. Detailed electrical characterizations reveal that the electron mobility degrades monotonically with increasing surface roughness and diameter scaling, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the dominant impact of surface roughness scattering on the electron mobility for miniaturized and surface disordered nanowires. All these factors suggest that careful consideration of nanowire geometries and surface condition is required for designing devices with optimal performance.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0957-4484</s0></fA01><fA03 i2="1"><s0>Nanotechnology : (Bristol, Print)</s0></fA03><fA05><s2>24</s2></fA05><fA06><s2>37</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Surface roughness induced electron mobility degradation in InAs nanowires</s1></fA08><fA11 i1="01" i2="1"><s1>FENGYUN WANG</s1></fA11><fA11 i1="02" i2="1"><s1>SENPO YIP</s1></fA11><fA11 i1="03" i2="1"><s1>NING HAN</s1></fA11><fA11 i1="04" i2="1"><s1>KITWA FOK</s1></fA11><fA11 i1="05" i2="1"><s1>HAO LIN</s1></fA11><fA11 i1="06" i2="1"><s1>HOU (Jared J.)</s1></fA11><fA11 i1="07" i2="1"><s1>GUOFA DONG</s1></fA11><fA11 i1="08" i2="1"><s1>TAKFU HUNG</s1></fA11><fA11 i1="09" i2="1"><s1>CHAN (K. S.)</s1></fA11><fA11 i1="10" i2="1"><s1>HO (Johnny C.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon Tong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="02"><s1>Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road</s1><s2>Qingdao</s2><s3>CHN</s3><sZ>1 aut.</sZ></fA14><fA14 i1="03"><s1>Shenzhen Research Institute, City University of Hong Kong</s1><s2>Shenzhen</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="04"><s1>Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon Tong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA20><s2>375202.1-375202.6</s2></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22480</s2><s5>354000501979210060</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>30 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0344156</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Nanotechnology : (Bristol. Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>In this work, we present a study of the surface roughness dependent electron mobility in InAs nanowires grown by the nickel-catalyzed chemical vapor deposition method. These nanowires have good crystallinity, well-controlled surface morphology without any surface coating or tapering and an excellent peak field-effect mobility up to 15 000 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> when configured into back-gated field-effect nanowire transistors. Detailed electrical characterizations reveal that the electron mobility degrades monotonically with increasing surface roughness and diameter scaling, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the dominant impact of surface roughness scattering on the electron mobility for miniaturized and surface disordered nanowires. All these factors suggest that careful consideration of nanowire geometries and surface condition is required for designing devices with optimal performance.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A07V</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07B</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A16H</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A15G</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Rugosité</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Roughness</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Mobilité électron</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Electron mobility</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Composé III-V</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>III-V compound</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Nanofil</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Nanowires</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Synthèse nanomatériau</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Nanomaterial synthesis</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Síntesis nanomaterial</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Nickel</s0><s2>NC</s2><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Nickel</s0><s2>NC</s2><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Catalyseur</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Catalysts</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Dépôt chimique phase vapeur</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>CVD</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Cristallinité</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Crystallinity</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Cristalinidad</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Morphologie surface</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Surface morphology</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Revêtement</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Coatings</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Nanoélectronique</s0><s5>29</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Nanoelectronics</s0><s5>29</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Propriété électronique</s0><s5>30</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Electronic properties</s0><s5>30</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Propiedad electrónica</s0><s5>30</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Propriété électrique</s0><s5>31</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Electrical properties</s0><s5>31</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Loi échelle</s0><s5>32</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Scaling laws</s0><s5>32</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Mesure température</s0><s5>33</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Temperature measurement</s0><s5>33</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Effet surface</s0><s5>34</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Surface effect</s0><s5>34</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Efecto superficie</s0><s5>34</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Interface</s0><s5>35</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Interfaces</s0><s5>35</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Diffusion phonon</s0><s5>36</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Phonon scattering</s0><s5>36</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Difusión fonón</s0><s5>36</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Diffusion surface</s0><s5>37</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Surface scattering</s0><s5>37</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Etat surface</s0><s5>38</s5></fC03><fC03 i1="24" i2="3" l="ENG"><s0>Surface states</s0><s5>38</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>8107V</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>8107B</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>8116</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>8116H</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>329</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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|texte= Surface roughness induced electron mobility degradation in InAs nanowires
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